001     135103
005     20240712084527.0
024 7 _ |a 10.1063/1.4813448
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024 7 _ |a 1077-3118
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024 7 _ |a 0003-6951
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037 _ _ |a FZJ-2013-03080
041 _ _ |a English
082 _ _ |a 530
100 1 _ |a Gerlach, D.
|0 P:(DE-HGF)0
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|e Corresponding author
245 _ _ |a The silicon/zinc oxide interface in amorphous silicon-based thin-film solar cells: Understanding an empirically optimized contact
260 _ _ |a Melville, NY
|c 2013
|b American Institute of Physics
336 7 _ |a article
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336 7 _ |a ARTICLE
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336 7 _ |a Journal Article
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500 _ _ |3 POF3_Assignment on 2016-02-29
520 _ _ |a The electronic structure of the interface between the boron-doped oxygenated amorphous silicon“window layer” (a-SiOx:H(B)) and aluminum-doped zinc oxide (ZnO:Al) was investigated usinghard x-ray photoelectron spectroscopy and compared to that of the boron-doped microcrystallinesilicon (lc-Si:H(B))/ZnO:Al interface. The corresponding valence band offsets have been determinedto be (2.8760.27) eV and (3.3760.27) eV, respectively. A lower tunnel junction barrier heightat the lc-Si:H(B)/ZnO:Al interface compared to that at the a-SiOx:H(B)/ZnO:Al interface isfound and linked to the higher device performances in cells where a lc-Si:H(B) buffer between thea-Si:H p-i-n absorber stack and the ZnO:Al contact is employed.
536 _ _ |a 111 - Thin Film Photovoltaics (POF2-111)
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|a HITEC - Helmholtz Interdisciplinary Doctoral Training in Energy and Climate Research (HITEC) (HITEC-20170406)
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700 1 _ |a Wilks, R. G.
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700 1 _ |a Wippler, D.
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700 1 _ |a Wimmer, M.
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700 1 _ |a Lozac'h, M.
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700 1 _ |a Félix, R.
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700 1 _ |a Mück, A.
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700 1 _ |a Meier, Matthias
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700 1 _ |a Ueda, S.
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700 1 _ |a Yoshikawa, H.
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700 1 _ |a Gorgoi, M.
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700 1 _ |a Lips, K.
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700 1 _ |a Rech, B.
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700 1 _ |a Sumiya, M.
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700 1 _ |a Hüpkes, J.
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700 1 _ |a Kobayashi, K.
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700 1 _ |a Bär, M.
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773 _ _ |a 10.1063/1.4813448
|g Vol. 103, no. 2, p. 023903 -
|0 PERI:(DE-600)1469436-0
|n 2
|p 023903-1
|t Applied physics letters
|v 103
|y 2013
|x 0003-6951
856 4 _ |u https://juser.fz-juelich.de/record/135103/files/FZJ-2013-03080.pdf
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