% IMPORTANT: The following is UTF-8 encoded. This means that in the presence % of non-ASCII characters, it will not work with BibTeX 0.99 or older. % Instead, you should use an up-to-date BibTeX implementation like “bibtex8” or % “biber”. @INPROCEEDINGS{Menouni:135288, author = {Menouni, M and Arutinov, D and Backhaus, M and Barbero, M and Beccherle, R and Breugnon, P and Caminada, L and Dube, S and Darbo, G and Fleury, J and Fougeron, D and Garcia-Sciveres, M and Gensolen, F and Gnani, D and Gonella, L and Gromov, V and Hemperek, T and Jensen, F and Karagounis, M and Kluit, R and Krueger, H and Kruth, A and Lu, Y and Rozanov, A and Schipper, J -D and Zivkovic, V and Mekkaoui, A}, title = {{SEU} tolerant memory design for the {ATLAS} pixel readout chip}, journal = {Journal of Instrumentation}, volume = {8}, number = {02}, issn = {1748-0221}, address = {London}, publisher = {Inst. of Physics}, reportid = {FZJ-2013-03232}, pages = {C02026 - C02026}, year = {2013}, abstract = {The FE-I4 chip for the B-layer upgrade is designed in a 130 nm CMOS process. For this design, configuration memories are based on the DICE latches where layout considerations are followed to improve the tolerance to SEU. Tests have shown that DICE latches for which layout approaches are adopted are 30 times more tolerant to SEU than the standard DICE latches. To prepare for the new pixel readout chip planned for the future upgrades, a prototype chip containing 512 pixels has been designed in a 65 nm CMOS process and a new approach is adopted for SEU tolerant latches. Results in terms of SEU and TID tolerance are presented.}, date = {17092012}, organization = {Topical Workshop on Electronics for Particle Physics 2012, Oxford (UK), 17092012 - 21092012}, cin = {ZEA-2}, ddc = {610}, cid = {I:(DE-Juel1)ZEA-2-20090406}, pnm = {899 - ohne Topic (POF2-899)}, pid = {G:(DE-HGF)POF2-899}, typ = {PUB:(DE-HGF)8 / PUB:(DE-HGF)16}, UT = {WOS:000315672700026}, doi = {10.1088/1748-0221/8/02/C02026}, url = {https://juser.fz-juelich.de/record/135288}, }