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| Hauptseite > Institutssammlungen > PGI > PGI-9 > Strain dependence of the valence-band offset in InAs/GaAs heterojunctions determined by ultraviolet photoelectron spectroscopy > print |
| Hauptseite > Institutssammlungen > PGI > PGI-9 > Strain dependence of the valence-band offset in InAs/GaAs heterojunctions determined by ultraviolet photoelectron spectroscopy > print |
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| 245 | _ | _ | |a Strain dependence of the valence-band offset in InAs/GaAs heterojunctions determined by ultraviolet photoelectron spectroscopy |
| 260 | _ | _ | |b American Institute of Physics |
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| 542 | _ | _ | |l Copyright AIP. This version is available at http://link.aps.org/abstract/PRB/v50/p7833 |
| 700 | 1 | _ | |a Förster, A. |b 1 |
| 700 | 1 | _ | |a Kohleick, R. |b 2 |
| 700 | 1 | _ | |a Ohler, C. |b 3 |
| 773 | _ | _ | |0 PERI:(DE-600)2844160-6 |n 11 |p 7833 - 7837 |t Physical review / B |v 50 |y 1994 |
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