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Strain dependence of the valence-band offset in InAs/GaAs heterojunctions determined by ultraviolet photoelectron spectroscopy

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American Institute of Physics

Physical review / B 50(11), 7833 - 7837 ()

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Note: Record converted from JUWEL: 18.07.2013
Contributing Institute(s):
  1. Halbleiter-Nanoelektronik (IBN-1)
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American Physical Society Transfer of Copyright Agreement ; OpenAccess
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 Record created 2013-07-18, last modified 2023-11-13
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