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| Book | PreJuSER-136125 |
; ; ; ; ;
2009
Forschungszentrum Jülich GmbH Zentralbibliothek, Verlag
Jülich
ISBN: 978-3-89336-559-3
Please use a persistent id in citations: http://hdl.handle.net/2128/3592
Abstract: The discovery of Giant Magnetoresistance (GMR) in 1988 laid the foundation to a whole new and very active research field – Spinelectronics or Spintronics – which strives to exploit the electron spin and electron spin currents as the basic carriers for the device functionality and information transfer in electronic devices. The pioneering work of Peter Grünberg (IFF) and Albert Fert (Université Paris-Sud), changed our view of the role of the electron spin in electrical transport and has been honored by the 2007 Nobel Prize in Physics, partly also because of its enormous technological and economical impact. Only 10 years after the discovery of the effect in the laboratory, GMR-based hard disk read heads hit the market as first generation spintronic devices and revolutionized the magnetic mass storage industry. Since its advent 20 years ago, Spintronics continues to provide us with a wide variety of spin-dependent transport and transfer processes, novel materials, phenomena and concepts, and many open questions and challenges. The emphasis in current spintronics research is threefold: $\bullet$ First, it aims to achieve a control of and the ability to manipulate spin transport on very small length scales down to the level of single spins, which will open a pathway to quantum information applications. This control also includes the active switching of the magnetization by means of spin-polarized currents. $\bullet$ Second, in order to obtain the best of both worlds spinelectronics may be combined with advanced semiconductor nanoelectronics. A crucial step in this direction is the realization of an efficient electrical spin-injection into semiconductors. $\bullet$ Third, the next generation of spintronic devices should combine passive and active functionalities, thereby enabling magnetologic circuits and even magnetoprocessors. On the way to meet these challenges many fundamental questions have to be solved and many new materals and materials combinations will be developed and explored. Among others this concerns the microscopic interactions and mechanisms leading to spin dephasing, the manipulation of spins by spin-orbit interactions, the understanding of spin transfer torque mechanisms, and the utilization of the spin Hall effect. On the material side, dilute magnetic semiconductors, highly spin-polarized oxides and half-metals, but also graphene and multiferroics are currently in the focus of interest. [...]
Keyword(s): magnetoresistance ; magnetic material ; magnetism ; quantum dot ; quantum electronics ; quantum Hall effect ; quantum computing, quantum computer ; spintronics
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