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@BOOK{Blgel:136125,
author = {Institut für Festkörperforschung (Jülich)},
editor = {Blügel, Stefan and Morgenstern, Markus and Bürgler,
Daniel and Schneider, Claus M. and Waser, Rainer},
title = {{S}pintronics - from {GMR} to quantum information: lecture
notes of the 40$^{th}$ spring school 2009},
volume = {10},
address = {Jülich},
publisher = {Forschungszentrum Jülich GmbH Zentralbibliothek, Verlag},
reportid = {PreJuSER-136125},
isbn = {978-3-89336-559-3},
series = {Schriften des Forschungszentrums Jülich. Reihe
Schlüsseltechnologien / key technologies},
pages = {getr. Zählung},
year = {2009},
note = {Record converted from JUWEL: 18.07.2013},
abstract = {The discovery of Giant Magnetoresistance (GMR) in 1988 laid
the foundation to a whole new and very active research field
– Spinelectronics or Spintronics – which strives to
exploit the electron spin and electron spin currents as the
basic carriers for the device functionality and information
transfer in electronic devices. The pioneering work of Peter
Grünberg (IFF) and Albert Fert (Université Paris-Sud),
changed our view of the role of the electron spin in
electrical transport and has been honored by the 2007 Nobel
Prize in Physics, partly also because of its enormous
technological and economical impact. Only 10 years after the
discovery of the effect in the laboratory, GMR-based hard
disk read heads hit the market as first generation
spintronic devices and revolutionized the magnetic mass
storage industry. Since its advent 20 years ago, Spintronics
continues to provide us with a wide variety of
spin-dependent transport and transfer processes, novel
materials, phenomena and concepts, and many open questions
and challenges. The emphasis in current spintronics research
is threefold: $\bullet$ First, it aims to achieve a control
of and the ability to manipulate spin transport on very
small length scales down to the level of single spins, which
will open a pathway to quantum information applications.
This control also includes the active switching of the
magnetization by means of spin-polarized currents. $\bullet$
Second, in order to obtain the best of both worlds
spinelectronics may be combined with advanced semiconductor
nanoelectronics. A crucial step in this direction is the
realization of an efficient electrical spin-injection into
semiconductors. $\bullet$ Third, the next generation of
spintronic devices should combine passive and active
functionalities, thereby enabling magnetologic circuits and
even magnetoprocessors. On the way to meet these challenges
many fundamental questions have to be solved and many new
materals and materials combinations will be developed and
explored. Among others this concerns the microscopic
interactions and mechanisms leading to spin dephasing, the
manipulation of spins by spin-orbit interactions, the
understanding of spin transfer torque mechanisms, and the
utilization of the spin Hall effect. On the material side,
dilute magnetic semiconductors, highly spin-polarized oxides
and half-metals, but also graphene and multiferroics are
currently in the focus of interest. [...]},
cin = {IFF},
ddc = {530},
cid = {I:(DE-Juel1)VDB241},
shelfmark = {FAF - Materials research - comprehensive works / FKGD -
Specific magnetic materials / FAF - Materialforschung -
allgemeine Serien / FZJ - Schriftenreihen des
Forschungszentrums Jülich},
typ = {PUB:(DE-HGF)3},
url = {https://juser.fz-juelich.de/record/136125},
}