%0 Journal Article
%A Flöhr, Kilian
%A Sladek, Kamil
%A Gunel, Yusuf
%A Lepsa, Mihail Ion
%A Hardtdegen, Hilde
%A Liebmann, Marcus
%A Schäpers, Thomas
%A Morgenstern, Markus
%T Scanning tunneling microscopy with InAs nanowire tips
%J Applied physics letters
%V 101
%N 24
%@ 0003-6951
%C Melville, NY
%I American Institute of Physics
%M FZJ-2013-03319
%P 243101 -
%D 2012
%X Indium arsenide nanowires grown by selective-area vapor phase epitaxy are used as tips for scanning tunneling microscopy (STM). The STM tips are realized by positioning the wires manually on the corner of a double cleaved gallium arsenide wafer with sub-μm precision and contacting them lithographically, which is fully compatible with further integrated circuitry on the GaAs wafer. STM images show a z noise of 2 pm and a lateral stability of, at least, 0.5 nm on a Au(111) surface. I(z) spectroscopy reveals an exponential decay indicating tunneling through vacuum. Subsequent electron microscopy images of the tip demonstrate that the wires are barely modified during the STM imaging.
%F PUB:(DE-HGF)16
%9 Journal Article
%U <Go to ISI:>//WOS:000312490000073
%R 10.1063/1.4769450
%U https://juser.fz-juelich.de/record/136523