Journal Article

FZJ-2013-03319

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Scanning tunneling microscopy with InAs nanowire tips

Flöhr, K. (Corresponding author) ; Sladek, K.FZJ* ; Gunel, Y.FZJ* ; Lepsa, M. I.FZJ* ; Hardtdegen, H.FZJ* ; Liebmann, M. ; Schäpers, T.FZJ* ; Morgenstern, M.

2012
American Institute of Physics Melville, NY

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Please use a persistent id in citations: http://hdl.handle.net/2128/17350  doi:10.1063/1.4769450

Abstract: Indium arsenide nanowires grown by selective-area vapor phase epitaxy are used as tips for scanning tunneling microscopy (STM). The STM tips are realized by positioning the wires manually on the corner of a double cleaved gallium arsenide wafer with sub-μm precision and contacting them lithographically, which is fully compatible with further integrated circuitry on the GaAs wafer. STM images show a z noise of 2 pm and a lateral stability of, at least, 0.5 nm on a Au(111) surface. I(z) spectroscopy reveals an exponential decay indicating tunneling through vacuum. Subsequent electron microscopy images of the tip demonstrate that the wires are barely modified during the STM imaging.

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Contributing Institute(s):

1. Halbleiter-Nanoelektronik (PGI-9)
2. JARA-FIT (JARA-FIT)

Research Program(s):

1. 421 - Frontiers of charge based Electronics (POF2-421) (POF2-421)

Appears in the scientific report 2013

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Database coverage:
; ; Allianz-Lizenz / DFG ; Current Contents - Social and Behavioral Sciences ; JCR ; Nationallizenz ; SCOPUS ; Science Citation Index ; Science Citation Index Expanded ; Thomson Reuters Master Journal List ; Web of Science Core Collection

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