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000136523 1001_ $$0P:(DE-HGF)0$$aFlöhr, Kilian$$b0$$eCorresponding author
000136523 245__ $$aScanning tunneling microscopy with InAs nanowire tips
000136523 260__ $$aMelville, NY$$bAmerican Institute of Physics$$c2012
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000136523 520__ $$aIndium arsenide nanowires grown by selective-area vapor phase epitaxy are used as tips for scanning tunneling microscopy (STM). The STM tips are realized by positioning the wires manually on the corner of a double cleaved gallium arsenide wafer with sub-μm precision and contacting them lithographically, which is fully compatible with further integrated circuitry on the GaAs wafer. STM images show a z noise of 2 pm and a lateral stability of, at least, 0.5 nm on a Au(111) surface. I(z) spectroscopy reveals an exponential decay indicating tunneling through vacuum. Subsequent electron microscopy images of the tip demonstrate that the wires are barely modified during the STM imaging.
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000136523 7001_ $$0P:(DE-Juel1)128635$$aSladek, Kamil$$b1
000136523 7001_ $$0P:(DE-Juel1)138870$$aGunel, Yusuf$$b2$$ufzj
000136523 7001_ $$0P:(DE-Juel1)128603$$aLepsa, Mihail Ion$$b3$$ufzj
000136523 7001_ $$0P:(DE-Juel1)125593$$aHardtdegen, Hilde$$b4
000136523 7001_ $$0P:(DE-HGF)0$$aLiebmann, Marcus$$b5
000136523 7001_ $$0P:(DE-Juel1)128634$$aSchäpers, Thomas$$b6
000136523 7001_ $$0P:(DE-HGF)0$$aMorgenstern, Markus$$b7
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