TY  - JOUR
AU  - Flöhr, Kilian
AU  - Sladek, Kamil
AU  - Gunel, Yusuf
AU  - Lepsa, Mihail Ion
AU  - Hardtdegen, Hilde
AU  - Liebmann, Marcus
AU  - Schäpers, Thomas
AU  - Morgenstern, Markus
TI  - Scanning tunneling microscopy with InAs nanowire tips
JO  - Applied physics letters
VL  - 101
IS  - 24
SN  - 0003-6951
CY  - Melville, NY
PB  - American Institute of Physics
M1  - FZJ-2013-03319
SP  - 243101 -
PY  - 2012
AB  - Indium arsenide nanowires grown by selective-area vapor phase epitaxy are used as tips for scanning tunneling microscopy (STM). The STM tips are realized by positioning the wires manually on the corner of a double cleaved gallium arsenide wafer with sub-μm precision and contacting them lithographically, which is fully compatible with further integrated circuitry on the GaAs wafer. STM images show a z noise of 2 pm and a lateral stability of, at least, 0.5 nm on a Au(111) surface. I(z) spectroscopy reveals an exponential decay indicating tunneling through vacuum. Subsequent electron microscopy images of the tip demonstrate that the wires are barely modified during the STM imaging.
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000312490000073
DO  - DOI:10.1063/1.4769450
UR  - https://juser.fz-juelich.de/record/136523
ER  -