% IMPORTANT: The following is UTF-8 encoded. This means that in the presence % of non-ASCII characters, it will not work with BibTeX 0.99 or older. % Instead, you should use an up-to-date BibTeX implementation like “bibtex8” or % “biber”. @ARTICLE{Flhr:136523, author = {Flöhr, Kilian and Sladek, Kamil and Gunel, Yusuf and Lepsa, Mihail Ion and Hardtdegen, Hilde and Liebmann, Marcus and Schäpers, Thomas and Morgenstern, Markus}, title = {{S}canning tunneling microscopy with {I}n{A}s nanowire tips}, journal = {Applied physics letters}, volume = {101}, number = {24}, issn = {0003-6951}, address = {Melville, NY}, publisher = {American Institute of Physics}, reportid = {FZJ-2013-03319}, pages = {243101 -}, year = {2012}, abstract = {Indium arsenide nanowires grown by selective-area vapor phase epitaxy are used as tips for scanning tunneling microscopy (STM). The STM tips are realized by positioning the wires manually on the corner of a double cleaved gallium arsenide wafer with sub-μm precision and contacting them lithographically, which is fully compatible with further integrated circuitry on the GaAs wafer. STM images show a z noise of 2 pm and a lateral stability of, at least, 0.5 nm on a Au(111) surface. I(z) spectroscopy reveals an exponential decay indicating tunneling through vacuum. Subsequent electron microscopy images of the tip demonstrate that the wires are barely modified during the STM imaging.}, cin = {PGI-9 / JARA-FIT}, ddc = {530}, cid = {I:(DE-Juel1)PGI-9-20110106 / $I:(DE-82)080009_20140620$}, pnm = {421 - Frontiers of charge based Electronics (POF2-421)}, pid = {G:(DE-HGF)POF2-421}, typ = {PUB:(DE-HGF)16}, UT = {WOS:000312490000073}, doi = {10.1063/1.4769450}, url = {https://juser.fz-juelich.de/record/136523}, }