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| 001 | 136523 | ||
| 005 | 20210129211845.0 | ||
| 024 | 7 | _ | |a 10.1063/1.4769450 |2 doi |
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| 100 | 1 | _ | |a Flöhr, Kilian |0 P:(DE-HGF)0 |b 0 |e Corresponding author |
| 245 | _ | _ | |a Scanning tunneling microscopy with InAs nanowire tips |
| 260 | _ | _ | |a Melville, NY |c 2012 |b American Institute of Physics |
| 336 | 7 | _ | |a article |2 DRIVER |
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| 520 | _ | _ | |a Indium arsenide nanowires grown by selective-area vapor phase epitaxy are used as tips for scanning tunneling microscopy (STM). The STM tips are realized by positioning the wires manually on the corner of a double cleaved gallium arsenide wafer with sub-μm precision and contacting them lithographically, which is fully compatible with further integrated circuitry on the GaAs wafer. STM images show a z noise of 2 pm and a lateral stability of, at least, 0.5 nm on a Au(111) surface. I(z) spectroscopy reveals an exponential decay indicating tunneling through vacuum. Subsequent electron microscopy images of the tip demonstrate that the wires are barely modified during the STM imaging. |
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| 773 | _ | _ | |a 10.1063/1.4769450 |g Vol. 101, no. 24, p. 243101 - |0 PERI:(DE-600)1469436-0 |n 24 |p 243101 - |t Applied physics letters |v 101 |y 2012 |x 0003-6951 |
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