Enhancement-Mode LaLuO3–AlGaN/GaN Metal–Insulator–Semiconductor High-Electron-Mobility Transistors Using Fluorine Plasma Ion Implantation

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Enhancement-Mode LaLuO3–AlGaN/GaN Metal–Insulator–Semiconductor High-Electron-Mobility Transistors Using Fluorine Plasma Ion Implantation - FZJ-2013-04433

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