%0 Journal Article
%A Yang, Shu
%A Huang, Sen
%A Schnee, Michael
%A Zhao, Qing-Tai
%A Schubert, Jürgen
%A Chen, Kevin J.
%T Fabrication and Characterization of Enhancement-Mode High-kappa LaLuO3-AlGaN/GaN MIS-HEMTs
%J IEEE transactions on electron devices
%V 60
%N 10
%@ 1557-9646
%C New York, NY
%I IEEE
%M FZJ-2013-04442
%P 3040 - 3046
%D 2013
%X In this paper, we investigate the enhancement-mode (E-mode) ${rm LaLuO}_{3}$ (LLO)-AlGaN/GaN metal-insulator-semiconductor high-electron mobility transistors (MIS-HEMTs) fabricated using fluorine (F) plasma ion implantation with a gate-dielectric-first planar process. The E-mode MIS-HEMTs exhibit a threshold voltage $(V_{rm TH})$ of 0.6 V, a peak transconductance of ${sim}{rm 193}~{rm mS}/{rm mm}$, a small hysteresis of 0.04 V in linear region characterized by a pulse-mode current-voltage measurement, and significantly suppressed current collapse under high-drain-bias switching conditions. X-ray photoelectron spectroscopy and secondary ion mass spectrometry analyses manifest that the negatively charged F ions penetrating into the (Al)GaN barrier layer serve as the primary $V_{rm TH}$ modulation mechanism, whereas the F ions in the fluorinated LLO film form chemical bonds with La/Lu atoms and become charge-neutral. The suppressed current collapse is verified as an advantageous byproduct of the F plasma ion implantation that also fluorinated the SiNx sidewalls in the vicinity of the gate electrode, and therefore, suppress electron injection to the gate-drain access region.
%F PUB:(DE-HGF)16
%9 Journal Article
%U <Go to ISI:>//WOS:000324928900010
%R 10.1109/TED.2013.2277559
%U https://juser.fz-juelich.de/record/138285