Journal Article

FZJ-2013-04442

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Fabrication and Characterization of Enhancement-Mode High-kappa LaLuO3-AlGaN/GaN MIS-HEMTs

Yang, S. (Corresponding author) ; Huang, S. ; Schnee, M.FZJ* ; Zhao, Q.-T.FZJ* ; Schubert, J.FZJ* ; Chen, K. J.

2013
IEEE New York, NY

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Please use a persistent id in citations: doi:10.1109/TED.2013.2277559

Abstract: In this paper, we investigate the enhancement-mode (E-mode) ${rm LaLuO}_{3}$ (LLO)-AlGaN/GaN metal-insulator-semiconductor high-electron mobility transistors (MIS-HEMTs) fabricated using fluorine (F) plasma ion implantation with a gate-dielectric-first planar process. The E-mode MIS-HEMTs exhibit a threshold voltage $(V_{rm TH})$ of 0.6 V, a peak transconductance of ${sim}{rm 193}~{rm mS}/{rm mm}$, a small hysteresis of 0.04 V in linear region characterized by a pulse-mode current-voltage measurement, and significantly suppressed current collapse under high-drain-bias switching conditions. X-ray photoelectron spectroscopy and secondary ion mass spectrometry analyses manifest that the negatively charged F ions penetrating into the (Al)GaN barrier layer serve as the primary $V_{rm TH}$ modulation mechanism, whereas the F ions in the fluorinated LLO film form chemical bonds with La/Lu atoms and become charge-neutral. The suppressed current collapse is verified as an advantageous byproduct of the F plasma ion implantation that also fluorinated the SiNx sidewalls in the vicinity of the gate electrode, and therefore, suppress electron injection to the gate-drain access region.

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Contributing Institute(s):

1. Halbleiter-Nanoelektronik (PGI-9)
2. Jülich-Aachen Research Alliance - Fundamentals of Future Information Technology (JARA-FIT)

Research Program(s):

1. 421 - Frontiers of charge based Electronics (POF2-421) (POF2-421)

Appears in the scientific report 2013

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