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000138285 0247_ $$2doi$$a10.1109/TED.2013.2277559
000138285 0247_ $$2ISSN$$a0018-9383
000138285 0247_ $$2ISSN$$a1557-9646
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000138285 037__ $$aFZJ-2013-04442
000138285 082__ $$a620
000138285 1001_ $$0P:(DE-HGF)0$$aYang, Shu$$b0$$eCorresponding author
000138285 245__ $$aFabrication and Characterization of Enhancement-Mode High-kappa LaLuO3-AlGaN/GaN MIS-HEMTs
000138285 260__ $$aNew York, NY$$bIEEE$$c2013
000138285 3367_ $$0PUB:(DE-HGF)16$$2PUB:(DE-HGF)$$aJournal Article$$bjournal$$mjournal$$s1381491586_19949
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000138285 500__ $$3POF3_Assignment on 2016-02-29
000138285 520__ $$aIn this paper, we investigate the enhancement-mode (E-mode) ${rm LaLuO}_{3}$ (LLO)-AlGaN/GaN metal-insulator-semiconductor high-electron mobility transistors (MIS-HEMTs) fabricated using fluorine (F) plasma ion implantation with a gate-dielectric-first planar process. The E-mode MIS-HEMTs exhibit a threshold voltage $(V_{rm TH})$ of 0.6 V, a peak transconductance of ${sim}{rm 193}~{rm mS}/{rm mm}$, a small hysteresis of 0.04 V in linear region characterized by a pulse-mode current-voltage measurement, and significantly suppressed current collapse under high-drain-bias switching conditions. X-ray photoelectron spectroscopy and secondary ion mass spectrometry analyses manifest that the negatively charged F ions penetrating into the (Al)GaN barrier layer serve as the primary $V_{rm TH}$ modulation mechanism, whereas the F ions in the fluorinated LLO film form chemical bonds with La/Lu atoms and become charge-neutral. The suppressed current collapse is verified as an advantageous byproduct of the F plasma ion implantation that also fluorinated the SiNx sidewalls in the vicinity of the gate electrode, and therefore, suppress electron injection to the gate-drain access region.
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000138285 7001_ $$0P:(DE-HGF)0$$aHuang, Sen$$b1
000138285 7001_ $$0P:(DE-Juel1)139578$$aSchnee, Michael$$b2$$ufzj
000138285 7001_ $$0P:(DE-Juel1)128649$$aZhao, Qing-Tai$$b3$$ufzj
000138285 7001_ $$0P:(DE-Juel1)128631$$aSchubert, Jürgen$$b4$$ufzj
000138285 7001_ $$0P:(DE-HGF)0$$aChen, Kevin J.$$b5
000138285 773__ $$0PERI:(DE-600)2028088-9$$a10.1109/TED.2013.2277559$$gVol. 60, no. 10, p. 3040 - 3046$$n10$$p3040 - 3046$$tIEEE transactions on electron devices$$v60$$x1557-9646
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000138285 9141_ $$y2013
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