TY  - JOUR
AU  - Yang, Shu
AU  - Huang, Sen
AU  - Schnee, Michael
AU  - Zhao, Qing-Tai
AU  - Schubert, Jürgen
AU  - Chen, Kevin J.
TI  - Fabrication and Characterization of Enhancement-Mode High-kappa LaLuO3-AlGaN/GaN MIS-HEMTs
JO  - IEEE transactions on electron devices
VL  - 60
IS  - 10
SN  - 1557-9646
CY  - New York, NY
PB  - IEEE
M1  - FZJ-2013-04442
SP  - 3040 - 3046
PY  - 2013
AB  - In this paper, we investigate the enhancement-mode (E-mode) ${rm LaLuO}_{3}$ (LLO)-AlGaN/GaN metal-insulator-semiconductor high-electron mobility transistors (MIS-HEMTs) fabricated using fluorine (F) plasma ion implantation with a gate-dielectric-first planar process. The E-mode MIS-HEMTs exhibit a threshold voltage $(V_{rm TH})$ of 0.6 V, a peak transconductance of ${sim}{rm 193}~{rm mS}/{rm mm}$, a small hysteresis of 0.04 V in linear region characterized by a pulse-mode current-voltage measurement, and significantly suppressed current collapse under high-drain-bias switching conditions. X-ray photoelectron spectroscopy and secondary ion mass spectrometry analyses manifest that the negatively charged F ions penetrating into the (Al)GaN barrier layer serve as the primary $V_{rm TH}$ modulation mechanism, whereas the F ions in the fluorinated LLO film form chemical bonds with La/Lu atoms and become charge-neutral. The suppressed current collapse is verified as an advantageous byproduct of the F plasma ion implantation that also fluorinated the SiNx sidewalls in the vicinity of the gate electrode, and therefore, suppress electron injection to the gate-drain access region.
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000324928900010
DO  - DOI:10.1109/TED.2013.2277559
UR  - https://juser.fz-juelich.de/record/138285
ER  -