% IMPORTANT: The following is UTF-8 encoded.  This means that in the presence
% of non-ASCII characters, it will not work with BibTeX 0.99 or older.
% Instead, you should use an up-to-date BibTeX implementation like “bibtex8” or
% “biber”.

@ARTICLE{Yang:138285,
      author       = {Yang, Shu and Huang, Sen and Schnee, Michael and Zhao,
                      Qing-Tai and Schubert, Jürgen and Chen, Kevin J.},
      title        = {{F}abrication and {C}haracterization of
                      {E}nhancement-{M}ode {H}igh-kappa
                      {L}a{L}u{O}3-{A}l{G}a{N}/{G}a{N} {MIS}-{HEMT}s},
      journal      = {IEEE transactions on electron devices},
      volume       = {60},
      number       = {10},
      issn         = {1557-9646},
      address      = {New York, NY},
      publisher    = {IEEE},
      reportid     = {FZJ-2013-04442},
      pages        = {3040 - 3046},
      year         = {2013},
      abstract     = {In this paper, we investigate the enhancement-mode (E-mode)
                      ${rm LaLuO}_{3}$ (LLO)-AlGaN/GaN
                      metal-insulator-semiconductor high-electron mobility
                      transistors (MIS-HEMTs) fabricated using fluorine (F) plasma
                      ion implantation with a gate-dielectric-first planar
                      process. The E-mode MIS-HEMTs exhibit a threshold voltage
                      $(V_{rm TH})$ of 0.6 V, a peak transconductance of ${sim}{rm
                      193}~{rm mS}/{rm mm}$, a small hysteresis of 0.04 V in
                      linear region characterized by a pulse-mode current-voltage
                      measurement, and significantly suppressed current collapse
                      under high-drain-bias switching conditions. X-ray
                      photoelectron spectroscopy and secondary ion mass
                      spectrometry analyses manifest that the negatively charged F
                      ions penetrating into the (Al)GaN barrier layer serve as the
                      primary $V_{rm TH}$ modulation mechanism, whereas the F ions
                      in the fluorinated LLO film form chemical bonds with La/Lu
                      atoms and become charge-neutral. The suppressed current
                      collapse is verified as an advantageous byproduct of the F
                      plasma ion implantation that also fluorinated the SiNx
                      sidewalls in the vicinity of the gate electrode, and
                      therefore, suppress electron injection to the gate-drain
                      access region.},
      cin          = {PGI-9 / JARA-FIT},
      ddc          = {620},
      cid          = {I:(DE-Juel1)PGI-9-20110106 / $I:(DE-82)080009_20140620$},
      pnm          = {421 - Frontiers of charge based Electronics (POF2-421)},
      pid          = {G:(DE-HGF)POF2-421},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000324928900010},
      doi          = {10.1109/TED.2013.2277559},
      url          = {https://juser.fz-juelich.de/record/138285},
}