Gast ::
| Hauptseite > Publikationsdatenbank > Fabrication and Characterization of Enhancement-Mode High-kappa LaLuO3-AlGaN/GaN MIS-HEMTs > print |
| Hauptseite > Publikationsdatenbank > Fabrication and Characterization of Enhancement-Mode High-kappa LaLuO3-AlGaN/GaN MIS-HEMTs > print |
| 001 | 138285 | ||
| 005 | 20210131025948.0 | ||
| 024 | 7 | _ | |2 doi |a 10.1109/TED.2013.2277559 |
| 024 | 7 | _ | |2 ISSN |a 0018-9383 |
| 024 | 7 | _ | |2 ISSN |a 1557-9646 |
| 024 | 7 | _ | |2 WOS |a WOS:000324928900010 |
| 024 | 7 | _ | |a altmetric:21821802 |2 altmetric |
| 037 | _ | _ | |a FZJ-2013-04442 |
| 082 | _ | _ | |a 620 |
| 100 | 1 | _ | |0 P:(DE-HGF)0 |a Yang, Shu |b 0 |e Corresponding author |
| 245 | _ | _ | |a Fabrication and Characterization of Enhancement-Mode High-kappa LaLuO3-AlGaN/GaN MIS-HEMTs |
| 260 | _ | _ | |a New York, NY |b IEEE |c 2013 |
| 336 | 7 | _ | |a Journal Article |b journal |m journal |0 PUB:(DE-HGF)16 |s 1381491586_19949 |2 PUB:(DE-HGF) |
| 336 | 7 | _ | |a Output Types/Journal article |2 DataCite |
| 336 | 7 | _ | |a Journal Article |0 0 |2 EndNote |
| 336 | 7 | _ | |a ARTICLE |2 BibTeX |
| 336 | 7 | _ | |a JOURNAL_ARTICLE |2 ORCID |
| 336 | 7 | _ | |a article |2 DRIVER |
| 500 | _ | _ | |3 POF3_Assignment on 2016-02-29 |
| 520 | _ | _ | |a In this paper, we investigate the enhancement-mode (E-mode) ${rm LaLuO}_{3}$ (LLO)-AlGaN/GaN metal-insulator-semiconductor high-electron mobility transistors (MIS-HEMTs) fabricated using fluorine (F) plasma ion implantation with a gate-dielectric-first planar process. The E-mode MIS-HEMTs exhibit a threshold voltage $(V_{rm TH})$ of 0.6 V, a peak transconductance of ${sim}{rm 193}~{rm mS}/{rm mm}$, a small hysteresis of 0.04 V in linear region characterized by a pulse-mode current-voltage measurement, and significantly suppressed current collapse under high-drain-bias switching conditions. X-ray photoelectron spectroscopy and secondary ion mass spectrometry analyses manifest that the negatively charged F ions penetrating into the (Al)GaN barrier layer serve as the primary $V_{rm TH}$ modulation mechanism, whereas the F ions in the fluorinated LLO film form chemical bonds with La/Lu atoms and become charge-neutral. The suppressed current collapse is verified as an advantageous byproduct of the F plasma ion implantation that also fluorinated the SiNx sidewalls in the vicinity of the gate electrode, and therefore, suppress electron injection to the gate-drain access region. |
| 536 | _ | _ | |0 G:(DE-HGF)POF2-421 |a 421 - Frontiers of charge based Electronics (POF2-421) |c POF2-421 |f POF II |x 0 |
| 588 | _ | _ | |a Dataset connected to CrossRef, juser.fz-juelich.de |
| 700 | 1 | _ | |0 P:(DE-HGF)0 |a Huang, Sen |b 1 |
| 700 | 1 | _ | |0 P:(DE-Juel1)139578 |a Schnee, Michael |b 2 |u fzj |
| 700 | 1 | _ | |0 P:(DE-Juel1)128649 |a Zhao, Qing-Tai |b 3 |u fzj |
| 700 | 1 | _ | |0 P:(DE-Juel1)128631 |a Schubert, Jürgen |b 4 |u fzj |
| 700 | 1 | _ | |0 P:(DE-HGF)0 |a Chen, Kevin J. |b 5 |
| 773 | _ | _ | |0 PERI:(DE-600)2028088-9 |a 10.1109/TED.2013.2277559 |g Vol. 60, no. 10, p. 3040 - 3046 |n 10 |p 3040 - 3046 |t IEEE transactions on electron devices |v 60 |x 1557-9646 |
| 856 | 4 | _ | |u https://juser.fz-juelich.de/record/138285/files/FZJ-2013-04442.pdf |y Restricted |
| 909 | C | O | |o oai:juser.fz-juelich.de:138285 |p VDB |
| 910 | 1 | _ | |0 I:(DE-588b)5008462-8 |6 P:(DE-Juel1)139578 |a Forschungszentrum Jülich GmbH |b 2 |k FZJ |
| 910 | 1 | _ | |0 I:(DE-588b)5008462-8 |6 P:(DE-Juel1)128649 |a Forschungszentrum Jülich GmbH |b 3 |k FZJ |
| 910 | 1 | _ | |0 I:(DE-588b)5008462-8 |6 P:(DE-Juel1)128631 |a Forschungszentrum Jülich GmbH |b 4 |k FZJ |
| 913 | 2 | _ | |a DE-HGF |b Key Technologies |l Future Information Technology - Fundamentals, Novel Concepts and Energy Efficiency (FIT) |1 G:(DE-HGF)POF3-520 |0 G:(DE-HGF)POF3-529H |2 G:(DE-HGF)POF3-500 |v Addenda |x 0 |
| 913 | 1 | _ | |0 G:(DE-HGF)POF2-421 |1 G:(DE-HGF)POF2-420 |2 G:(DE-HGF)POF2-400 |a DE-HGF |b Schlüsseltechnologien |v Frontiers of charge based Electronics |x 0 |4 G:(DE-HGF)POF |3 G:(DE-HGF)POF2 |l Grundlagen zukünftiger Informationstechnologien |
| 914 | 1 | _ | |y 2013 |
| 915 | _ | _ | |0 StatID:(DE-HGF)0040 |2 StatID |a Peer Review unknown |
| 920 | _ | _ | |l yes |
| 920 | 1 | _ | |0 I:(DE-Juel1)PGI-9-20110106 |k PGI-9 |l Halbleiter-Nanoelektronik |x 0 |
| 920 | 1 | _ | |0 I:(DE-82)080009_20140620 |k JARA-FIT |l Jülich-Aachen Research Alliance - Fundamentals of Future Information Technology |x 1 |
| 980 | _ | _ | |a journal |
| 980 | _ | _ | |a VDB |
| 980 | _ | _ | |a UNRESTRICTED |
| 980 | _ | _ | |a I:(DE-Juel1)PGI-9-20110106 |
| 980 | _ | _ | |a I:(DE-Juel1)VDB881 |
| 981 | _ | _ | |a I:(DE-Juel1)VDB881 |
| Library | Collection | CLSMajor | CLSMinor | Language | Author |
|---|