TY  - JOUR
AU  - Rieger, Torsten
AU  - Grützmacher, Detlev
AU  - Lepsa, Mihail Ion
TI  - Si substrate preparation for the VS and VLS growth of InAs nanowires
JO  - Physica status solidi / Rapid research letters
VL  - 7
IS  - 10
SN  - 1862-6254
CY  - Weinheim
PB  - Wiley-VCH
M1  - FZJ-2013-04641
SP  - 840 - 844
PY  - 2013
AB  - The growth of self-catalyzed InAs nanowires on Si(111) substrates via vapour–solid (VS) and vapour–liquid–solid (VLS) growth mechanisms is investigated using molecular beam epitaxy. For both mechanisms, the substrate preparation plays a crucial role. In this context, the required thin oxide layer for the VS growth of the nanowires is obtained by treating the HF-cleaned Si substrate with hydrogen peroxide. For the VLS growth, Ga is predeposited on the unprocessed Si substrate. The Ga forms droplets, which etch the native oxide and create the necessary pinholes.
AB  - 
AB  - (© 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000328484500014
DO  - DOI:10.1002/pssr.201307229
UR  - https://juser.fz-juelich.de/record/138536
ER  -