Journal Article

FZJ-2013-04641

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Si substrate preparation for the VS and VLS growth of InAs nanowires

Rieger, T. (Corresponding author)FZJ* ; Grützmacher, D.FZJ* ; Lepsa, M. I.FZJ*

2013
Wiley-VCH Weinheim

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Please use a persistent id in citations: doi:10.1002/pssr.201307229

Abstract: The growth of self-catalyzed InAs nanowires on Si(111) substrates via vapour–solid (VS) and vapour–liquid–solid (VLS) growth mechanisms is investigated using molecular beam epitaxy. For both mechanisms, the substrate preparation plays a crucial role. In this context, the required thin oxide layer for the VS growth of the nanowires is obtained by treating the HF-cleaned Si substrate with hydrogen peroxide. For the VLS growth, Ga is predeposited on the unprocessed Si substrate. The Ga forms droplets, which etch the native oxide and create the necessary pinholes. (© 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

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Contributing Institute(s):

1. Halbleiter-Nanoelektronik (PGI-9)

Research Program(s):

1. 421 - Frontiers of charge based Electronics (POF2-421) (POF2-421)

Appears in the scientific report 2013

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Database coverage:
Current Contents - Social and Behavioral Sciences ; JCR ; SCOPUS ; Science Citation Index ; Science Citation Index Expanded ; Thomson Reuters Master Journal List ; Web of Science Core Collection

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