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@ARTICLE{Rieger:138536,
author = {Rieger, Torsten and Grützmacher, Detlev and Lepsa, Mihail
Ion},
title = {{S}i substrate preparation for the {VS} and {VLS} growth of
{I}n{A}s nanowires},
journal = {Physica status solidi / Rapid research letters},
volume = {7},
number = {10},
issn = {1862-6254},
address = {Weinheim},
publisher = {Wiley-VCH},
reportid = {FZJ-2013-04641},
pages = {840 - 844},
year = {2013},
abstract = {The growth of self-catalyzed InAs nanowires on Si(111)
substrates via vapour–solid (VS) and
vapour–liquid–solid (VLS) growth mechanisms is
investigated using molecular beam epitaxy. For both
mechanisms, the substrate preparation plays a crucial role.
In this context, the required thin oxide layer for the VS
growth of the nanowires is obtained by treating the
HF-cleaned Si substrate with hydrogen peroxide. For the VLS
growth, Ga is predeposited on the unprocessed Si substrate.
The Ga forms droplets, which etch the native oxide and
create the necessary pinholes. (© 2013 WILEY-VCH Verlag
GmbH $\&$ Co. KGaA, Weinheim)},
cin = {PGI-9},
ddc = {530},
cid = {I:(DE-Juel1)PGI-9-20110106},
pnm = {421 - Frontiers of charge based Electronics (POF2-421)},
pid = {G:(DE-HGF)POF2-421},
typ = {PUB:(DE-HGF)16},
UT = {WOS:000328484500014},
doi = {10.1002/pssr.201307229},
url = {https://juser.fz-juelich.de/record/138536},
}