Home > Publications database > Si substrate preparation for the VS and VLS growth of InAs nanowires > print

001     138536
005     20210129212255.0
024 7 _ |a 10.1002/pssr.201307229
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024 7 _ |a 1862-6270
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024 7 _ |a 1862-6254
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037 _ _ |a FZJ-2013-04641
082 _ _ |a 530
100 1 _ |a Rieger, Torsten
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|e Corresponding author
245 _ _ |a Si substrate preparation for the VS and VLS growth of InAs nanowires
260 _ _ |a Weinheim
|c 2013
|b Wiley-VCH
336 7 _ |a Journal Article
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336 7 _ |a ARTICLE
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500 _ _ |3 POF3_Assignment on 2016-02-29
520 _ _ |a The growth of self-catalyzed InAs nanowires on Si(111) substrates via vapour–solid (VS) and vapour–liquid–solid (VLS) growth mechanisms is investigated using molecular beam epitaxy. For both mechanisms, the substrate preparation plays a crucial role. In this context, the required thin oxide layer for the VS growth of the nanowires is obtained by treating the HF-cleaned Si substrate with hydrogen peroxide. For the VLS growth, Ga is predeposited on the unprocessed Si substrate. The Ga forms droplets, which etch the native oxide and create the necessary pinholes. (© 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
536 _ _ |a 421 - Frontiers of charge based Electronics (POF2-421)
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700 1 _ |a Grützmacher, Detlev
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700 1 _ |a Lepsa, Mihail Ion
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773 _ _ |a 10.1002/pssr.201307229
|g Vol. 7, no. 10, p. 840 - 844
|p 840 - 844
|n 10
|0 PERI:(DE-600)2259465-6
|t Physica status solidi / Rapid research letters
|v 7
|y 2013
|x 1862-6254
856 4 _ |u https://juser.fz-juelich.de/record/138536/files/FZJ-2013-04641.pdf
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909 C O |o oai:juser.fz-juelich.de:138536
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910 1 _ |a Forschungszentrum Jülich GmbH
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914 1 _ |y 2013
915 _ _ |a JCR/ISI refereed
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