%0 Journal Article
%A Riess, Sally
%A Mikulics, Martin
%A Winden, Andreas
%A Adam, Roman
%A Marso, Michel
%A Grützmacher, Detlev
%A Hardtdegen, Hilde
%T Highly Transparent Conducting Polymer Top Contacts for Future III–Nitride Based Single Photon Emitters
%J Japanese journal of applied physics
%V 52
%@ 1347-4065
%C Tokyo
%I Inst. of Pure and Applied Physics
%M FZJ-2013-04797
%P 08JH10 -
%D 2013
%X In this paper we report on a simple conductive polymer based contacting technology for III–nitride based nanostructures with respect to the electrical operation within the telecommunication wavelength range. Singularly addressable InN/GaN pyramidal nanostructures were selectively grown by metalorganic vapour phase epitaxy (MOVPE) and subsequently integrated into a high-frequency device layout for future ultrafast electro-optical operation. The employment of the p-conducting polymer poly(3,4-ethylenedioxythiophene)–poly(styrene sulfonate) (PEDOT:PSS) is found to increase the light transmittance up to 89% at a wavelength of 1550 nm compared to 72% in the case of a conventional Ni/Au thin layer top contact. DC measurements using a quasi operation mode for 1000 h reveal no degradation and only a moderate increase of the dark currents. Thus, conducting polymer technology shows tremendous potential for future highly efficient and reliable room temperature operation of nitride based single photon emitters (SPEs).
%F PUB:(DE-HGF)16
%9 Journal Article
%U <Go to ISI:>//WOS:000323883100118
%R 10.7567/JJAP.52.08JH10
%U https://juser.fz-juelich.de/record/138710