Journal Article

FZJ-2013-04797

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Highly Transparent Conducting Polymer Top Contacts for Future III–Nitride Based Single Photon Emitters

Riess, S. (Corresponding author)FZJ* ; Mikulics, M.FZJ* ; Winden, A.FZJ* ; Adam, R.FZJ* ; Marso, M. ; Grützmacher, D.FZJ* ; Hardtdegen, H.FZJ*

2013
Inst. of Pure and Applied Physics Tokyo

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Please use a persistent id in citations: doi:10.7567/JJAP.52.08JH10

Abstract: In this paper we report on a simple conductive polymer based contacting technology for III–nitride based nanostructures with respect to the electrical operation within the telecommunication wavelength range. Singularly addressable InN/GaN pyramidal nanostructures were selectively grown by metalorganic vapour phase epitaxy (MOVPE) and subsequently integrated into a high-frequency device layout for future ultrafast electro-optical operation. The employment of the p-conducting polymer poly(3,4-ethylenedioxythiophene)–poly(styrene sulfonate) (PEDOT:PSS) is found to increase the light transmittance up to 89% at a wavelength of 1550 nm compared to 72% in the case of a conventional Ni/Au thin layer top contact. DC measurements using a quasi operation mode for 1000 h reveal no degradation and only a moderate increase of the dark currents. Thus, conducting polymer technology shows tremendous potential for future highly efficient and reliable room temperature operation of nitride based single photon emitters (SPEs).

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Contributing Institute(s):

1. Halbleiter-Nanoelektronik (PGI-9)
2. Jülich-Aachen Research Alliance - Fundamentals of Future Information Technology (JARA-FIT)

Research Program(s):

1. 421 - Frontiers of charge based Electronics (POF2-421) (POF2-421)

Appears in the scientific report 2013

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Database coverage:
; Current Contents - Social and Behavioral Sciences ; JCR ; SCOPUS ; Science Citation Index ; Science Citation Index Expanded ; Thomson Reuters Master Journal List ; Web of Science Core Collection

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