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@ARTICLE{Riess:138710,
      author       = {Riess, Sally and Mikulics, Martin and Winden, Andreas and
                      Adam, Roman and Marso, Michel and Grützmacher, Detlev and
                      Hardtdegen, Hilde},
      title        = {{H}ighly {T}ransparent {C}onducting {P}olymer {T}op
                      {C}ontacts for {F}uture {III}–{N}itride {B}ased {S}ingle
                      {P}hoton {E}mitters},
      journal      = {Japanese journal of applied physics},
      volume       = {52},
      issn         = {1347-4065},
      address      = {Tokyo},
      publisher    = {Inst. of Pure and Applied Physics},
      reportid     = {FZJ-2013-04797},
      pages        = {08JH10 -},
      year         = {2013},
      abstract     = {In this paper we report on a simple conductive polymer
                      based contacting technology for III–nitride based
                      nanostructures with respect to the electrical operation
                      within the telecommunication wavelength range. Singularly
                      addressable InN/GaN pyramidal nanostructures were
                      selectively grown by metalorganic vapour phase epitaxy
                      (MOVPE) and subsequently integrated into a high-frequency
                      device layout for future ultrafast electro-optical
                      operation. The employment of the p-conducting polymer
                      poly(3,4-ethylenedioxythiophene)–poly(styrene sulfonate)
                      (PEDOT:PSS) is found to increase the light transmittance up
                      to $89\%$ at a wavelength of 1550 nm compared to $72\%$ in
                      the case of a conventional Ni/Au thin layer top contact. DC
                      measurements using a quasi operation mode for 1000 h reveal
                      no degradation and only a moderate increase of the dark
                      currents. Thus, conducting polymer technology shows
                      tremendous potential for future highly efficient and
                      reliable room temperature operation of nitride based single
                      photon emitters (SPEs).},
      cin          = {PGI-9 / JARA-FIT},
      ddc          = {530},
      cid          = {I:(DE-Juel1)PGI-9-20110106 / $I:(DE-82)080009_20140620$},
      pnm          = {421 - Frontiers of charge based Electronics (POF2-421)},
      pid          = {G:(DE-HGF)POF2-421},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000323883100118},
      doi          = {10.7567/JJAP.52.08JH10},
      url          = {https://juser.fz-juelich.de/record/138710},
}