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@ARTICLE{Zhukov:138722,
author = {Zhukov, A. A. and Volk, Ch. and Winden, A. and Hardtdegen,
H. and Schäpers, Th.},
title = {{L}ow-temperature conductance of the weak junction in
{I}n{A}s nanowire in the field of {AFM} scanning gate},
journal = {JETP letters},
volume = {93},
number = {1},
issn = {1090-6487},
address = {Heidelberg [u.a.]},
publisher = {Springer},
reportid = {FZJ-2013-04809},
pages = {10-14},
year = {2011},
abstract = {We have investigated the conductance of an InAs nanowire in
the presence of an electrical potential created by an AFM
scanning gate at liquid helium temperature. The influence of
the direction of a local electrical field on the tunneling
rate through a weak junction in the InAs wire is clearly
observed. To explain this behavior, the redistribution of
the electrons among conductive channels in the wire must be
taken into account. We have confirmed that the pattern of
Coulomb blockade diamonds gives the same result for the
ratio of quantum dot sizes as that revealed by scanning gate
imaging.},
cin = {PGI-9 / JARA-FIT},
ddc = {530},
cid = {I:(DE-Juel1)PGI-9-20110106 / $I:(DE-82)080009_20140620$},
pnm = {422 - Spin-based and quantum information (POF2-422)},
pid = {G:(DE-HGF)POF2-422},
typ = {PUB:(DE-HGF)16},
UT = {WOS:000288711700003},
doi = {10.1134/S0021364011010103},
url = {https://juser.fz-juelich.de/record/138722},
}