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| Hauptseite > Publikationsdatenbank > Femtosecond and highly sensitive GaAs metal–semiconductor–metal photodetectors grown on aluminum mirrors/pseudo-substrates |
| Hauptseite > Publikationsdatenbank > Femtosecond and highly sensitive GaAs metal–semiconductor–metal photodetectors grown on aluminum mirrors/pseudo-substrates |
| Journal Article | FZJ-2013-04810 |
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2010
IOP Publ.
Bristol
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Please use a persistent id in citations: doi:10.1088/0268-1242/25/7/075001
Abstract: In this study, ultrafast GaAs metal–semiconductor–metal (MSM) photodetectors grown on aluminum mirrors/pseudo-substrates were fabricated and tested. Surface characterization measurements revealed the good quality of the surface morphology, while x-ray diffraction measurements showed several crystallographic orientations of the GaAs layer. The material exhibited a 50 fs carrier lifetime due to growth-induced defects. The response of the photodetectors showed a full width at half maximum of 300 fs. These results demonstrate that the growth of GaAs layers on lattice-mismatched metallic substrates with high thermal conductivity is a promising approach for low-cost and large-area fabrication of electronic and ultrafast photonic devices that require a highly effective thermal drain.
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