%0 Conference Proceedings
%A Winden, Andreas
%A Mikulics, Martin
%A Grützmacher, Detlev
%A Hardtdegen, Hilde
%T MOVPE of site-controlled pyramidal (Ga,In)N hetero-nanostructures for future single photons emitters
%V 27
%C Jülich
%I Forschungszentrum Jülich
%M FZJ-2013-05322
%@ 978-3-89336-870-9
%D 2013
%X In this work, we report on how to obtain site- and size-controlled InN quantum dots (QDs) by selective area metalorganic vapour phase epitaxy (SA-MOVPE) and how to embed them into a vertical p-n junction for future single photon emitters. To this purpose we investigated the growth of InN nanostructures in differently sized mask apertures as a function of the growth time and established a low temperature growth process to cover
%X these structures with a p-doped GaN cap layer. We observed that single sub-25 nm quantum dots can be achieved when the aperture diameter is reduced to 20 nm and the growth time accounts for less than a minute. Micro-photoluminescence (μ-PL) measurements on single GaN capped InN nano-pyramids exhibit a broad and intense DAP transition band in the range of 2.85 eV indicating successful p-doping.
%B 15th European Workshop on Metal Organic Vapour Phase Epitaxy
%C 2 Jun 2013 - 5 Jun 2013, Aachen (Germany)
Y2 2 Jun 2013 - 5 Jun 2013
M2 Aachen, Germany
%F PUB:(DE-HGF)26
%9 Proceedings
%U https://juser.fz-juelich.de/record/139325