guest ::
| Home > Publications database > MOVPE of site-controlled pyramidal (Ga,In)N hetero-nanostructures for future single photons emitters |
| Home > Publications database > MOVPE of site-controlled pyramidal (Ga,In)N hetero-nanostructures for future single photons emitters |
| Proceedings | FZJ-2013-05322 |
; ; ;
2013
Forschungszentrum Jülich
Jülich
ISBN: 978-3-89336-870-9
Abstract: In this work, we report on how to obtain site- and size-controlled InN quantum dots (QDs) by selective area metalorganic vapour phase epitaxy (SA-MOVPE) and how to embed them into a vertical p-n junction for future single photon emitters. To this purpose we investigated the growth of InN nanostructures in differently sized mask apertures as a function of the growth time and established a low temperature growth process to cover these structures with a p-doped GaN cap layer. We observed that single sub-25 nm quantum dots can be achieved when the aperture diameter is reduced to 20 nm and the growth time accounts for less than a minute. Micro-photoluminescence (μ-PL) measurements on single GaN capped InN nano-pyramids exhibit a broad and intense DAP transition band in the range of 2.85 eV indicating successful p-doping.
|
The record appears in these collections: |