TY  - CONF
AU  - Winden, Andreas
AU  - Mikulics, Martin
AU  - Grützmacher, Detlev
AU  - Hardtdegen, Hilde
TI  - MOVPE of site-controlled pyramidal (Ga,In)N hetero-nanostructures for future single photons emitters
VL  - 27
CY  - Jülich
PB  - Forschungszentrum Jülich
M1  - FZJ-2013-05322
SN  - 978-3-89336-870-9
PY  - 2013
AB  - In this work, we report on how to obtain site- and size-controlled InN quantum dots (QDs) by selective area metalorganic vapour phase epitaxy (SA-MOVPE) and how to embed them into a vertical p-n junction for future single photon emitters. To this purpose we investigated the growth of InN nanostructures in differently sized mask apertures as a function of the growth time and established a low temperature growth process to cover
AB  - these structures with a p-doped GaN cap layer. We observed that single sub-25 nm quantum dots can be achieved when the aperture diameter is reduced to 20 nm and the growth time accounts for less than a minute. Micro-photoluminescence (μ-PL) measurements on single GaN capped InN nano-pyramids exhibit a broad and intense DAP transition band in the range of 2.85 eV indicating successful p-doping.
T2  - 15th European Workshop on Metal Organic Vapour Phase Epitaxy
CY  - 2 Jun 2013 - 5 Jun 2013, Aachen (Germany)
Y2  - 2 Jun 2013 - 5 Jun 2013
M2  - Aachen, Germany
LB  - PUB:(DE-HGF)26
UR  - https://juser.fz-juelich.de/record/139325
ER  -