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| Home > Publications database > MOVPE of site-controlled pyramidal (Ga,In)N hetero-nanostructures for future single photons emitters > print |
| 001 | 139325 | ||
| 005 | 20210129212543.0 | ||
| 020 | _ | _ | |a 978-3-89336-870-9 |
| 037 | _ | _ | |a FZJ-2013-05322 |
| 041 | _ | _ | |a English |
| 082 | _ | _ | |a 500 |
| 100 | 1 | _ | |a Winden, Andreas |0 P:(DE-Juel1)144014 |b 0 |u fzj |e Corresponding author |
| 111 | 2 | _ | |a 15th European Workshop on Metal Organic Vapour Phase Epitaxy |w Germany |c Aachen |d 2013-06-02 - 2013-06-05 |g EWMOVPE XV |
| 245 | _ | _ | |a MOVPE of site-controlled pyramidal (Ga,In)N hetero-nanostructures for future single photons emitters |
| 260 | _ | _ | |a Jülich |c 2013 |b Forschungszentrum Jülich |
| 336 | 7 | _ | |a Proceedings |b proc |m proc |0 PUB:(DE-HGF)26 |s 1385384509_17399 |2 PUB:(DE-HGF) |
| 336 | 7 | _ | |a PROCEEDINGS |2 BibTeX |
| 336 | 7 | _ | |a BOOK |2 ORCID |
| 336 | 7 | _ | |a Output Types/Book |2 DataCite |
| 336 | 7 | _ | |a conferenceObject |2 DRIVER |
| 336 | 7 | _ | |a Conference Proceedings |0 3 |2 EndNote |
| 490 | 0 | _ | |v 27 |
| 520 | _ | _ | |a In this work, we report on how to obtain site- and size-controlled InN quantum dots (QDs) by selective area metalorganic vapour phase epitaxy (SA-MOVPE) and how to embed them into a vertical p-n junction for future single photon emitters. To this purpose we investigated the growth of InN nanostructures in differently sized mask apertures as a function of the growth time and established a low temperature growth process to cover
these structures with a p-doped GaN cap layer. We observed that single sub-25 nm quantum dots can be achieved when the aperture diameter is reduced to 20 nm and the growth time accounts for less than a minute. Micro-photoluminescence (μ-PL) measurements on single GaN capped InN nano-pyramids exhibit a broad and intense DAP transition band in the range of 2.85 eV indicating successful p-doping. |
| 536 | _ | _ | |a 421 - Frontiers of charge based Electronics (POF2-421) |0 G:(DE-HGF)POF2-421 |c POF2-421 |x 0 |f POF II |
| 588 | _ | _ | |a Dataset connected to GVK, |
| 700 | 1 | _ | |a Mikulics, Martin |0 P:(DE-Juel1)128613 |b 1 |
| 700 | 1 | _ | |a Grützmacher, Detlev |0 P:(DE-Juel1)125588 |b 2 |
| 700 | 1 | _ | |a Hardtdegen, Hilde |0 P:(DE-Juel1)125593 |b 3 |
| 909 | C | O | |o oai:juser.fz-juelich.de:139325 |p VDB |
| 910 | 1 | _ | |a Forschungszentrum Jülich GmbH |0 I:(DE-588b)5008462-8 |k FZJ |b 0 |6 P:(DE-Juel1)144014 |
| 910 | 1 | _ | |a Forschungszentrum Jülich GmbH |0 I:(DE-588b)5008462-8 |k FZJ |b 1 |6 P:(DE-Juel1)128613 |
| 910 | 1 | _ | |a Forschungszentrum Jülich GmbH |0 I:(DE-588b)5008462-8 |k FZJ |b 2 |6 P:(DE-Juel1)125588 |
| 910 | 1 | _ | |a Forschungszentrum Jülich GmbH |0 I:(DE-588b)5008462-8 |k FZJ |b 3 |6 P:(DE-Juel1)125593 |
| 913 | 1 | _ | |a DE-HGF |b Schlüsseltechnologien |1 G:(DE-HGF)POF2-420 |0 G:(DE-HGF)POF2-421 |2 G:(DE-HGF)POF2-400 |v Frontiers of charge based Electronics |x 0 |4 G:(DE-HGF)POF |3 G:(DE-HGF)POF2 |l Grundlagen zukünftiger Informationstechnologien |
| 914 | 1 | _ | |y 2013 |
| 920 | _ | _ | |l yes |
| 920 | 1 | _ | |0 I:(DE-Juel1)PGI-9-20110106 |k PGI-9 |l Halbleiter-Nanoelektronik |x 0 |
| 980 | _ | _ | |a proc |
| 980 | _ | _ | |a VDB |
| 980 | _ | _ | |a UNRESTRICTED |
| 980 | _ | _ | |a I:(DE-Juel1)PGI-9-20110106 |
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