%0 Journal Article
%A Hahn, Herwig
%A Reuters, B.
%A Pooth, Alexander
%A Holländer, Bernhard
%A Heuken, Michael
%A Kalisch, Holger
%A Vescan, Andrei
%T p-Channel Enhancement and Depletion Mode GaN-Based HFETs With Quaternary Backbarriers
%J IEEE transactions on electron devices
%V 60
%N 10
%@ 1557-9646
%C New York, NY
%I IEEE
%M FZJ-2013-05332
%P 3005 - 3011
%D 2013
%X Within the last years, III-nitride-based devices have been demonstrated with exceptional performance. There is, however, a severe lack of knowledge when it comes fabrication of p-channel devices. p-Channel heterostructure field-effect transistors (HFETs) could open the way for nitride-based complementary logic. Here, a comprehensive study of enhancement and depletion mode p-channel GaN/AlInGaN HFETs is performed. The influence of a highly p-doped GaN cap layer on device performance is investigated. Gate recessing and changes in composition of the backbarrier are analyzed. ON/OFF ratios of up to 108 and subthreshold swings of about 75 mV/decade are achieved.
%F PUB:(DE-HGF)16
%9 Journal Article
%U <Go to ISI:>//WOS:000324928900005
%R 10.1109/TED.2013.2272330
%U https://juser.fz-juelich.de/record/139335