Journal Article

FZJ-2013-05332

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png p-Channel Enhancement and Depletion Mode GaN-Based HFETs With Quaternary Backbarriers

Hahn, H. (Corresponding author) ; Reuters, B. ; Pooth, A. ; Holländer, B.FZJ* ; Heuken, M. ; Kalisch, H. ; Vescan, A.

2013
IEEE New York, NY

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Please use a persistent id in citations: doi:10.1109/TED.2013.2272330

Abstract: Within the last years, III-nitride-based devices have been demonstrated with exceptional performance. There is, however, a severe lack of knowledge when it comes fabrication of p-channel devices. p-Channel heterostructure field-effect transistors (HFETs) could open the way for nitride-based complementary logic. Here, a comprehensive study of enhancement and depletion mode p-channel GaN/AlInGaN HFETs is performed. The influence of a highly p-doped GaN cap layer on device performance is investigated. Gate recessing and changes in composition of the backbarrier are analyzed. ON/OFF ratios of up to 108 and subthreshold swings of about 75 mV/decade are achieved.

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Contributing Institute(s):

1. Halbleiter-Nanoelektronik (PGI-9)

Research Program(s):

1. 421 - Frontiers of charge based Electronics (POF2-421) (POF2-421)

Appears in the scientific report 2013

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