000139335 001__ 139335
000139335 005__ 20210129212544.0
000139335 0247_ $$2doi$$a10.1109/TED.2013.2272330
000139335 0247_ $$2ISSN$$a0018-9383
000139335 0247_ $$2ISSN$$a
000139335 0247_ $$2ISSN$$a1557-9646
000139335 0247_ $$2WOS$$aWOS:000324928900005
000139335 0247_ $$2altmetric$$aaltmetric:21822129
000139335 037__ $$aFZJ-2013-05332
000139335 082__ $$a620
000139335 1001_ $$0P:(DE-HGF)0$$aHahn, Herwig$$b0$$eCorresponding author
000139335 245__ $$ap-Channel Enhancement and Depletion Mode GaN-Based HFETs With Quaternary Backbarriers
000139335 260__ $$aNew York, NY$$bIEEE$$c2013
000139335 3367_ $$0PUB:(DE-HGF)16$$2PUB:(DE-HGF)$$aJournal Article$$bjournal$$mjournal$$s1385475999_28776
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000139335 500__ $$3POF3_Assignment on 2016-02-29
000139335 520__ $$aWithin the last years, III-nitride-based devices have been demonstrated with exceptional performance. There is, however, a severe lack of knowledge when it comes fabrication of p-channel devices. p-Channel heterostructure field-effect transistors (HFETs) could open the way for nitride-based complementary logic. Here, a comprehensive study of enhancement and depletion mode p-channel GaN/AlInGaN HFETs is performed. The influence of a highly p-doped GaN cap layer on device performance is investigated. Gate recessing and changes in composition of the backbarrier are analyzed. ON/OFF ratios of up to 108 and subthreshold swings of about 75 mV/decade are achieved.
000139335 536__ $$0G:(DE-HGF)POF2-421$$a421 - Frontiers of charge based Electronics (POF2-421)$$cPOF2-421$$fPOF II$$x0
000139335 588__ $$aDataset connected to CrossRef, juser.fz-juelich.de
000139335 7001_ $$0P:(DE-HGF)0$$aReuters, B.$$b1
000139335 7001_ $$0P:(DE-HGF)0$$aPooth, Alexander$$b2
000139335 7001_ $$0P:(DE-Juel1)125595$$aHolländer, Bernhard$$b3
000139335 7001_ $$0P:(DE-HGF)0$$aHeuken, Michael$$b4
000139335 7001_ $$0P:(DE-HGF)0$$aKalisch, Holger$$b5
000139335 7001_ $$0P:(DE-HGF)0$$aVescan, Andrei$$b6
000139335 773__ $$0PERI:(DE-600)2028088-9$$a10.1109/TED.2013.2272330$$gVol. 60, no. 10, p. 3005 - 3011$$n10$$p3005 - 3011$$tIEEE transactions on electron devices$$v60$$x1557-9646$$y2013
000139335 8564_ $$uhttps://juser.fz-juelich.de/record/139335/files/FZJ-2013-05332_PV.pdf$$yRestricted$$zPublished final document.
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000139335 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)125595$$aForschungszentrum Jülich GmbH$$b3$$kFZJ
000139335 9132_ $$0G:(DE-HGF)POF3-529H$$1G:(DE-HGF)POF3-520$$2G:(DE-HGF)POF3-500$$aDE-HGF$$bKey Technologies$$lFuture Information Technology - Fundamentals, Novel Concepts and Energy Efficiency (FIT)$$vAddenda$$x0
000139335 9131_ $$0G:(DE-HGF)POF2-421$$1G:(DE-HGF)POF2-420$$2G:(DE-HGF)POF2-400$$3G:(DE-HGF)POF2$$4G:(DE-HGF)POF$$aDE-HGF$$bSchlüsseltechnologien$$lGrundlagen zukünftiger Informationstechnologien$$vFrontiers of charge based Electronics$$x0
000139335 9141_ $$y2013
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000139335 9201_ $$0I:(DE-Juel1)PGI-9-20110106$$kPGI-9$$lHalbleiter-Nanoelektronik$$x0
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