TY  - JOUR
AU  - Hahn, Herwig
AU  - Reuters, B.
AU  - Pooth, Alexander
AU  - Holländer, Bernhard
AU  - Heuken, Michael
AU  - Kalisch, Holger
AU  - Vescan, Andrei
TI  - p-Channel Enhancement and Depletion Mode GaN-Based HFETs With Quaternary Backbarriers
JO  - IEEE transactions on electron devices
VL  - 60
IS  - 10
SN  - 1557-9646
CY  - New York, NY
PB  - IEEE
M1  - FZJ-2013-05332
SP  - 3005 - 3011
PY  - 2013
AB  - Within the last years, III-nitride-based devices have been demonstrated with exceptional performance. There is, however, a severe lack of knowledge when it comes fabrication of p-channel devices. p-Channel heterostructure field-effect transistors (HFETs) could open the way for nitride-based complementary logic. Here, a comprehensive study of enhancement and depletion mode p-channel GaN/AlInGaN HFETs is performed. The influence of a highly p-doped GaN cap layer on device performance is investigated. Gate recessing and changes in composition of the backbarrier are analyzed. ON/OFF ratios of up to 108 and subthreshold swings of about 75 mV/decade are achieved.
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000324928900005
DO  - DOI:10.1109/TED.2013.2272330
UR  - https://juser.fz-juelich.de/record/139335
ER  -