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| 001 | 139335 | ||
| 005 | 20210129212544.0 | ||
| 024 | 7 | _ | |a 10.1109/TED.2013.2272330 |2 doi |
| 024 | 7 | _ | |a 0018-9383 |2 ISSN |
| 024 | 7 | _ | |a |2 ISSN |
| 024 | 7 | _ | |a 1557-9646 |2 ISSN |
| 024 | 7 | _ | |a WOS:000324928900005 |2 WOS |
| 024 | 7 | _ | |a altmetric:21822129 |2 altmetric |
| 037 | _ | _ | |a FZJ-2013-05332 |
| 082 | _ | _ | |a 620 |
| 100 | 1 | _ | |a Hahn, Herwig |0 P:(DE-HGF)0 |b 0 |e Corresponding author |
| 245 | _ | _ | |a p-Channel Enhancement and Depletion Mode GaN-Based HFETs With Quaternary Backbarriers |
| 260 | _ | _ | |a New York, NY |c 2013 |b IEEE |
| 336 | 7 | _ | |a Journal Article |b journal |m journal |0 PUB:(DE-HGF)16 |s 1385475999_28776 |2 PUB:(DE-HGF) |
| 336 | 7 | _ | |a Output Types/Journal article |2 DataCite |
| 336 | 7 | _ | |a Journal Article |0 0 |2 EndNote |
| 336 | 7 | _ | |a ARTICLE |2 BibTeX |
| 336 | 7 | _ | |a JOURNAL_ARTICLE |2 ORCID |
| 336 | 7 | _ | |a article |2 DRIVER |
| 500 | _ | _ | |3 POF3_Assignment on 2016-02-29 |
| 520 | _ | _ | |a Within the last years, III-nitride-based devices have been demonstrated with exceptional performance. There is, however, a severe lack of knowledge when it comes fabrication of p-channel devices. p-Channel heterostructure field-effect transistors (HFETs) could open the way for nitride-based complementary logic. Here, a comprehensive study of enhancement and depletion mode p-channel GaN/AlInGaN HFETs is performed. The influence of a highly p-doped GaN cap layer on device performance is investigated. Gate recessing and changes in composition of the backbarrier are analyzed. ON/OFF ratios of up to 108 and subthreshold swings of about 75 mV/decade are achieved. |
| 536 | _ | _ | |a 421 - Frontiers of charge based Electronics (POF2-421) |0 G:(DE-HGF)POF2-421 |c POF2-421 |x 0 |f POF II |
| 588 | _ | _ | |a Dataset connected to CrossRef, juser.fz-juelich.de |
| 700 | 1 | _ | |a Reuters, B. |0 P:(DE-HGF)0 |b 1 |
| 700 | 1 | _ | |a Pooth, Alexander |0 P:(DE-HGF)0 |b 2 |
| 700 | 1 | _ | |a Holländer, Bernhard |0 P:(DE-Juel1)125595 |b 3 |
| 700 | 1 | _ | |a Heuken, Michael |0 P:(DE-HGF)0 |b 4 |
| 700 | 1 | _ | |a Kalisch, Holger |0 P:(DE-HGF)0 |b 5 |
| 700 | 1 | _ | |a Vescan, Andrei |0 P:(DE-HGF)0 |b 6 |
| 773 | _ | _ | |a 10.1109/TED.2013.2272330 |g Vol. 60, no. 10, p. 3005 - 3011 |p 3005 - 3011 |n 10 |0 PERI:(DE-600)2028088-9 |t IEEE transactions on electron devices |v 60 |y 2013 |x 1557-9646 |
| 856 | 4 | _ | |u https://juser.fz-juelich.de/record/139335/files/FZJ-2013-05332_PV.pdf |z Published final document. |y Restricted |
| 909 | C | O | |o oai:juser.fz-juelich.de:139335 |p VDB |
| 910 | 1 | _ | |a Forschungszentrum Jülich GmbH |0 I:(DE-588b)5008462-8 |k FZJ |b 3 |6 P:(DE-Juel1)125595 |
| 913 | 2 | _ | |a DE-HGF |b Key Technologies |l Future Information Technology - Fundamentals, Novel Concepts and Energy Efficiency (FIT) |1 G:(DE-HGF)POF3-520 |0 G:(DE-HGF)POF3-529H |2 G:(DE-HGF)POF3-500 |v Addenda |x 0 |
| 913 | 1 | _ | |a DE-HGF |b Schlüsseltechnologien |1 G:(DE-HGF)POF2-420 |0 G:(DE-HGF)POF2-421 |2 G:(DE-HGF)POF2-400 |v Frontiers of charge based Electronics |x 0 |4 G:(DE-HGF)POF |3 G:(DE-HGF)POF2 |l Grundlagen zukünftiger Informationstechnologien |
| 914 | 1 | _ | |y 2013 |
| 915 | _ | _ | |a Peer Review unknown |0 StatID:(DE-HGF)0040 |2 StatID |
| 920 | 1 | _ | |0 I:(DE-Juel1)PGI-9-20110106 |k PGI-9 |l Halbleiter-Nanoelektronik |x 0 |
| 980 | _ | _ | |a journal |
| 980 | _ | _ | |a VDB |
| 980 | _ | _ | |a UNRESTRICTED |
| 980 | _ | _ | |a I:(DE-Juel1)PGI-9-20110106 |
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