%0 Journal Article
%A Witte, W
%A Reuters, B
%A Fahle, D
%A Behmenburg, H
%A Wang, K R
%A Trampert, A
%A Holländer, B
%A Hahn, H
%A Kalisch, H
%A Heuken, M
%A Vescan, A
%T AlGaN/GaN heterostructure field-effect transistors regrown on nitrogen implanted templates
%J Semiconductor science and technology
%V 28
%N 8
%@ 1361-6641
%C Bristol
%I IOP Publ.
%M FZJ-2013-05333
%P 085006 -
%D 2013
%X We demonstrate the application of nitrogen (N) implantation in GaN as a current-blocking layer. In a first step, vertical current-blocking behavior was confirmed by processing quasi-vertical Schottky diodes with full-area N-implantation. The leakage current was only 10−6 A cm−2 in forward and reverse directions. Also, the regrowth of AlGaN/GaN heterostructure field-effect transistors on N-implanted and, for reference, non-implanted GaN templates is demonstrated. Even though a decrease in the mobility and sheet carrier density of the two-dimensional electron gas was observed, excellent off-state properties were achieved. Regrown devices exhibited leakage currents as low as 10−7 mA mm−1, showing very good quality of the regrowth interface. However, a detailed analysis with pulsed I–V and C–V measurements suggest an increased presence of traps due to regrowth, especially on N-implanted templates.
%F PUB:(DE-HGF)16
%9 Journal Article
%U <Go to ISI:>//WOS:000321701100009
%R 10.1088/0268-1242/28/8/085006
%U https://juser.fz-juelich.de/record/139336