AlGaN/GaN heterostructure field-effect transistors regrown on nitrogen implanted templates

Witte, W; Behmenburg, H; Fahle, D; Kalisch, H; Vescan, A; Hahn, H; Heuken, M; Trampert, A; Wang, K R; Reuters, B; Holländer, B

doi:10.1088/0268-1242/28/8/085006

Journal Article

FZJ-2013-05333

AlGaN/GaN heterostructure field-effect transistors regrown on nitrogen implanted templates

Witte, W. (Corresponding author) ; Reuters, B. ; Fahle, D. ; Behmenburg, H. ; Wang, K. R. ; Trampert, A. ; Holländer, B.FZJ* ; Hahn, H. ; Kalisch, H. ; Heuken, M. ; Vescan, A.

2013
IOP Publ. Bristol

Semiconductor science and technology 28(8), 085006 - (2013) [10.1088/0268-1242/28/8/085006]

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Abstract: We demonstrate the application of nitrogen (N) implantation in GaN as a current-blocking layer. In a first step, vertical current-blocking behavior was confirmed by processing quasi-vertical Schottky diodes with full-area N-implantation. The leakage current was only 10−6 A cm−2 in forward and reverse directions. Also, the regrowth of AlGaN/GaN heterostructure field-effect transistors on N-implanted and, for reference, non-implanted GaN templates is demonstrated. Even though a decrease in the mobility and sheet carrier density of the two-dimensional electron gas was observed, excellent off-state properties were achieved. Regrown devices exhibited leakage currents as low as 10−7 mA mm−1, showing very good quality of the regrowth interface. However, a detailed analysis with pulsed I–V and C–V measurements suggest an increased presence of traps due to regrowth, especially on N-implanted templates.

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