TY  - JOUR
AU  - Witte, W
AU  - Reuters, B
AU  - Fahle, D
AU  - Behmenburg, H
AU  - Wang, K R
AU  - Trampert, A
AU  - Holländer, B
AU  - Hahn, H
AU  - Kalisch, H
AU  - Heuken, M
AU  - Vescan, A
TI  - AlGaN/GaN heterostructure field-effect transistors regrown on nitrogen implanted templates
JO  - Semiconductor science and technology
VL  - 28
IS  - 8
SN  - 1361-6641
CY  - Bristol
PB  - IOP Publ.
M1  - FZJ-2013-05333
SP  - 085006 -
PY  - 2013
AB  - We demonstrate the application of nitrogen (N) implantation in GaN as a current-blocking layer. In a first step, vertical current-blocking behavior was confirmed by processing quasi-vertical Schottky diodes with full-area N-implantation. The leakage current was only 10−6 A cm−2 in forward and reverse directions. Also, the regrowth of AlGaN/GaN heterostructure field-effect transistors on N-implanted and, for reference, non-implanted GaN templates is demonstrated. Even though a decrease in the mobility and sheet carrier density of the two-dimensional electron gas was observed, excellent off-state properties were achieved. Regrown devices exhibited leakage currents as low as 10−7 mA mm−1, showing very good quality of the regrowth interface. However, a detailed analysis with pulsed I–V and C–V measurements suggest an increased presence of traps due to regrowth, especially on N-implanted templates.
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000321701100009
DO  - DOI:10.1088/0268-1242/28/8/085006
UR  - https://juser.fz-juelich.de/record/139336
ER  -