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@ARTICLE{Witte:139336,
      author       = {Witte, W and Reuters, B and Fahle, D and Behmenburg, H and
                      Wang, K R and Trampert, A and Holländer, B and Hahn, H and
                      Kalisch, H and Heuken, M and Vescan, A},
      title        = {{A}l{G}a{N}/{G}a{N} heterostructure field-effect
                      transistors regrown on nitrogen implanted templates},
      journal      = {Semiconductor science and technology},
      volume       = {28},
      number       = {8},
      issn         = {1361-6641},
      address      = {Bristol},
      publisher    = {IOP Publ.},
      reportid     = {FZJ-2013-05333},
      pages        = {085006 -},
      year         = {2013},
      abstract     = {We demonstrate the application of nitrogen (N) implantation
                      in GaN as a current-blocking layer. In a first step,
                      vertical current-blocking behavior was confirmed by
                      processing quasi-vertical Schottky diodes with full-area
                      N-implantation. The leakage current was only 10−6
                      A cm−2 in forward and reverse directions. Also, the
                      regrowth of AlGaN/GaN heterostructure field-effect
                      transistors on N-implanted and, for reference, non-implanted
                      GaN templates is demonstrated. Even though a decrease in the
                      mobility and sheet carrier density of the two-dimensional
                      electron gas was observed, excellent off-state properties
                      were achieved. Regrown devices exhibited leakage currents as
                      low as 10−7 mA mm−1, showing very good quality of the
                      regrowth interface. However, a detailed analysis with pulsed
                      I–V and C–V measurements suggest an increased presence
                      of traps due to regrowth, especially on N-implanted
                      templates.},
      cin          = {PGI-9 / JARA-FIT},
      ddc          = {530},
      cid          = {I:(DE-Juel1)PGI-9-20110106 / $I:(DE-82)080009_20140620$},
      pnm          = {421 - Frontiers of charge based Electronics (POF2-421)},
      pid          = {G:(DE-HGF)POF2-421},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000321701100009},
      doi          = {10.1088/0268-1242/28/8/085006},
      url          = {https://juser.fz-juelich.de/record/139336},
}