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| 001 | 139336 | ||
| 005 | 20210129212544.0 | ||
| 024 | 7 | _ | |a 10.1088/0268-1242/28/8/085006 |2 doi |
| 024 | 7 | _ | |a 0268-1242 |2 ISSN |
| 024 | 7 | _ | |a 1361-6641 |2 ISSN |
| 024 | 7 | _ | |a WOS:000321701100009 |2 WOS |
| 037 | _ | _ | |a FZJ-2013-05333 |
| 082 | _ | _ | |a 530 |
| 100 | 1 | _ | |a Witte, W |0 P:(DE-HGF)0 |b 0 |e Corresponding author |
| 245 | _ | _ | |a AlGaN/GaN heterostructure field-effect transistors regrown on nitrogen implanted templates |
| 260 | _ | _ | |a Bristol |c 2013 |b IOP Publ. |
| 336 | 7 | _ | |a Journal Article |b journal |m journal |0 PUB:(DE-HGF)16 |s 1385641332_8527 |2 PUB:(DE-HGF) |
| 336 | 7 | _ | |a Output Types/Journal article |2 DataCite |
| 336 | 7 | _ | |a Journal Article |0 0 |2 EndNote |
| 336 | 7 | _ | |a ARTICLE |2 BibTeX |
| 336 | 7 | _ | |a JOURNAL_ARTICLE |2 ORCID |
| 336 | 7 | _ | |a article |2 DRIVER |
| 500 | _ | _ | |3 POF3_Assignment on 2016-02-29 |
| 520 | _ | _ | |a We demonstrate the application of nitrogen (N) implantation in GaN as a current-blocking layer. In a first step, vertical current-blocking behavior was confirmed by processing quasi-vertical Schottky diodes with full-area N-implantation. The leakage current was only 10−6 A cm−2 in forward and reverse directions. Also, the regrowth of AlGaN/GaN heterostructure field-effect transistors on N-implanted and, for reference, non-implanted GaN templates is demonstrated. Even though a decrease in the mobility and sheet carrier density of the two-dimensional electron gas was observed, excellent off-state properties were achieved. Regrown devices exhibited leakage currents as low as 10−7 mA mm−1, showing very good quality of the regrowth interface. However, a detailed analysis with pulsed I–V and C–V measurements suggest an increased presence of traps due to regrowth, especially on N-implanted templates. |
| 536 | _ | _ | |a 421 - Frontiers of charge based Electronics (POF2-421) |0 G:(DE-HGF)POF2-421 |c POF2-421 |x 0 |f POF II |
| 588 | _ | _ | |a Dataset connected to CrossRef, juser.fz-juelich.de |
| 700 | 1 | _ | |a Reuters, B |0 P:(DE-HGF)0 |b 1 |
| 700 | 1 | _ | |a Fahle, D |0 P:(DE-HGF)0 |b 2 |
| 700 | 1 | _ | |a Behmenburg, H |0 P:(DE-HGF)0 |b 3 |
| 700 | 1 | _ | |a Wang, K R |0 P:(DE-HGF)0 |b 4 |
| 700 | 1 | _ | |a Trampert, A |0 P:(DE-HGF)0 |b 5 |
| 700 | 1 | _ | |a Holländer, B |0 P:(DE-Juel1)125595 |b 6 |u fzj |
| 700 | 1 | _ | |a Hahn, H |0 P:(DE-HGF)0 |b 7 |
| 700 | 1 | _ | |a Kalisch, H |0 P:(DE-HGF)0 |b 8 |
| 700 | 1 | _ | |a Heuken, M |0 P:(DE-HGF)0 |b 9 |
| 700 | 1 | _ | |a Vescan, A |0 P:(DE-HGF)0 |b 10 |
| 773 | _ | _ | |a 10.1088/0268-1242/28/8/085006 |g Vol. 28, no. 8, p. 085006 - |p 085006 - |n 8 |0 PERI:(DE-600)1361285-2 |t Semiconductor science and technology |v 28 |y 2013 |x 1361-6641 |
| 856 | 4 | _ | |u https://juser.fz-juelich.de/record/139336/files/FZJ-2013-05333_PV.pdf |z Published final document. |y Restricted |
| 909 | C | O | |o oai:juser.fz-juelich.de:139336 |p VDB |
| 910 | 1 | _ | |a Forschungszentrum Jülich GmbH |0 I:(DE-588b)5008462-8 |k FZJ |b 6 |6 P:(DE-Juel1)125595 |
| 913 | 2 | _ | |a DE-HGF |b Key Technologies |l Future Information Technology - Fundamentals, Novel Concepts and Energy Efficiency (FIT) |1 G:(DE-HGF)POF3-520 |0 G:(DE-HGF)POF3-529H |2 G:(DE-HGF)POF3-500 |v Addenda |x 0 |
| 913 | 1 | _ | |a DE-HGF |b Schlüsseltechnologien |1 G:(DE-HGF)POF2-420 |0 G:(DE-HGF)POF2-421 |2 G:(DE-HGF)POF2-400 |v Frontiers of charge based Electronics |x 0 |4 G:(DE-HGF)POF |3 G:(DE-HGF)POF2 |l Grundlagen zukünftiger Informationstechnologien |
| 914 | 1 | _ | |y 2013 |
| 915 | _ | _ | |a JCR/ISI refereed |0 StatID:(DE-HGF)0010 |2 StatID |
| 915 | _ | _ | |a JCR |0 StatID:(DE-HGF)0100 |2 StatID |
| 915 | _ | _ | |a WoS |0 StatID:(DE-HGF)0110 |2 StatID |b Science Citation Index |
| 915 | _ | _ | |a WoS |0 StatID:(DE-HGF)0111 |2 StatID |b Science Citation Index Expanded |
| 915 | _ | _ | |a DBCoverage |0 StatID:(DE-HGF)0150 |2 StatID |b Web of Science Core Collection |
| 915 | _ | _ | |a DBCoverage |0 StatID:(DE-HGF)0199 |2 StatID |b Thomson Reuters Master Journal List |
| 915 | _ | _ | |a DBCoverage |0 StatID:(DE-HGF)0200 |2 StatID |b SCOPUS |
| 915 | _ | _ | |a Nationallizenz |0 StatID:(DE-HGF)0420 |2 StatID |
| 915 | _ | _ | |a DBCoverage |0 StatID:(DE-HGF)1020 |2 StatID |b Current Contents - Social and Behavioral Sciences |
| 920 | 1 | _ | |0 I:(DE-Juel1)PGI-9-20110106 |k PGI-9 |l Halbleiter-Nanoelektronik |x 0 |
| 920 | 1 | _ | |0 I:(DE-82)080009_20140620 |k JARA-FIT |l Jülich-Aachen Research Alliance - Fundamentals of Future Information Technology |x 1 |
| 980 | _ | _ | |a journal |
| 980 | _ | _ | |a VDB |
| 980 | _ | _ | |a UNRESTRICTED |
| 980 | _ | _ | |a I:(DE-Juel1)PGI-9-20110106 |
| 980 | _ | _ | |a I:(DE-Juel1)VDB881 |
| 981 | _ | _ | |a I:(DE-Juel1)VDB881 |
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