%0 Journal Article
%A Zhang, B.
%A Yu, W.
%A Zhao, Q. T.
%A Buca, D.
%A Breuer, Uwe
%A Hartmann, J. -M.
%A Holländer, B.
%A Mantl, S.
%A Zhang, M.
%A Wang, X.
%T Effects of C+ ion implantation on electrical properties of NiSiGe/SiGe contacts
%J Nuclear instruments & methods in physics research / B
%V 307
%@ 0168-583X
%C Amsterdam [u.a.]
%I Elsevier
%M FZJ-2013-05335
%P 408 - 411
%D 2013
%X We have investigated the morphology and electrical properties of NiSiGe/SiGe contact by C+ ions pre-implanted into relaxed Si0.8Ge0.2 layers. Cross-section transmission electron microscopy revealed that both the surface and interface of NiSiGe were improved by C+ ions implantation. In addition, the effective hole Schottky barrier heights (ΦBp) of NiSiGe/SiGe were extracted. ΦBp was observed to decrease substantially with an increase in C+ ion implantation dose.
%F PUB:(DE-HGF)16
%9 Journal Article
%U <Go to ISI:>//WOS:000321722200091
%R 10.1016/j.nimb.2012.11.088
%U https://juser.fz-juelich.de/record/139338