Journal Article

FZJ-2013-05335

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Effects of C+ ion implantation on electrical properties of NiSiGe/SiGe contacts

Zhang, B. (Corresponding author)FZJ* ; Yu, W. ; Zhao, Q. T.FZJ* ; Buca, D.FZJ* ; Breuer, U.ZEA-3*FZJ* ; Hartmann, J. -. ; Holländer, B.FZJ* ; Mantl, S.FZJ* ; Zhang, M. ; Wang, X.

2013
Elsevier Amsterdam [u.a.]

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Please use a persistent id in citations: doi:10.1016/j.nimb.2012.11.088

Abstract: We have investigated the morphology and electrical properties of NiSiGe/SiGe contact by C+ ions pre-implanted into relaxed Si0.8Ge0.2 layers. Cross-section transmission electron microscopy revealed that both the surface and interface of NiSiGe were improved by C+ ions implantation. In addition, the effective hole Schottky barrier heights (ΦBp) of NiSiGe/SiGe were extracted. ΦBp was observed to decrease substantially with an increase in C+ ion implantation dose.

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Contributing Institute(s):

1. Halbleiter-Nanoelektronik (PGI-9)
2. Analytik (ZEA-3)
3. Weiche Materie (ICS-3)

Research Program(s):

1. 421 - Frontiers of charge based Electronics (POF2-421) (POF2-421)

Appears in the scientific report 2013

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Database coverage:
; Current Contents - Life Sciences ; Current Contents - Physical, Chemical and Earth Sciences ; JCR ; Nationallizenz ; SCOPUS ; Science Citation Index ; Science Citation Index Expanded ; Thomson Reuters Master Journal List ; Web of Science Core Collection

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