TY  - JOUR
AU  - Zhang, B.
AU  - Yu, W.
AU  - Zhao, Q. T.
AU  - Buca, D.
AU  - Breuer, Uwe
AU  - Hartmann, J. -M.
AU  - Holländer, B.
AU  - Mantl, S.
AU  - Zhang, M.
AU  - Wang, X.
TI  - Effects of C+ ion implantation on electrical properties of NiSiGe/SiGe contacts
JO  - Nuclear instruments & methods in physics research / B
VL  - 307
SN  - 0168-583X
CY  - Amsterdam [u.a.]
PB  - Elsevier
M1  - FZJ-2013-05335
SP  - 408 - 411
PY  - 2013
AB  - We have investigated the morphology and electrical properties of NiSiGe/SiGe contact by C+ ions pre-implanted into relaxed Si0.8Ge0.2 layers. Cross-section transmission electron microscopy revealed that both the surface and interface of NiSiGe were improved by C+ ions implantation. In addition, the effective hole Schottky barrier heights (ΦBp) of NiSiGe/SiGe were extracted. ΦBp was observed to decrease substantially with an increase in C+ ion implantation dose.
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000321722200091
DO  - DOI:10.1016/j.nimb.2012.11.088
UR  - https://juser.fz-juelich.de/record/139338
ER  -