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@ARTICLE{Zhang:139338,
author = {Zhang, B. and Yu, W. and Zhao, Q. T. and Buca, D. and
Breuer, Uwe and Hartmann, J. -M. and Holländer, B. and
Mantl, S. and Zhang, M. and Wang, X.},
title = {{E}ffects of {C}+ ion implantation on electrical properties
of {N}i{S}i{G}e/{S}i{G}e contacts},
journal = {Nuclear instruments $\&$ methods in physics research / B},
volume = {307},
issn = {0168-583X},
address = {Amsterdam [u.a.]},
publisher = {Elsevier},
reportid = {FZJ-2013-05335},
pages = {408 - 411},
year = {2013},
abstract = {We have investigated the morphology and electrical
properties of NiSiGe/SiGe contact by C+ ions pre-implanted
into relaxed Si0.8Ge0.2 layers. Cross-section transmission
electron microscopy revealed that both the surface and
interface of NiSiGe were improved by C+ ions implantation.
In addition, the effective hole Schottky barrier heights
(ΦBp) of NiSiGe/SiGe were extracted. ΦBp was observed to
decrease substantially with an increase in C+ ion
implantation dose.},
cin = {PGI-9 / ZEA-3 / ICS-3},
ddc = {530},
cid = {I:(DE-Juel1)PGI-9-20110106 / I:(DE-Juel1)ZEA-3-20090406 /
I:(DE-Juel1)ICS-3-20110106},
pnm = {421 - Frontiers of charge based Electronics (POF2-421)},
pid = {G:(DE-HGF)POF2-421},
typ = {PUB:(DE-HGF)16},
UT = {WOS:000321722200091},
doi = {10.1016/j.nimb.2012.11.088},
url = {https://juser.fz-juelich.de/record/139338},
}