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037 _ _ |a FZJ-2013-05335
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100 1 _ |a Zhang, B.
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245 _ _ |a Effects of C+ ion implantation on electrical properties of NiSiGe/SiGe contacts
260 _ _ |a Amsterdam [u.a.]
|c 2013
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336 7 _ |a Journal Article
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520 _ _ |a We have investigated the morphology and electrical properties of NiSiGe/SiGe contact by C+ ions pre-implanted into relaxed Si0.8Ge0.2 layers. Cross-section transmission electron microscopy revealed that both the surface and interface of NiSiGe were improved by C+ ions implantation. In addition, the effective hole Schottky barrier heights (ΦBp) of NiSiGe/SiGe were extracted. ΦBp was observed to decrease substantially with an increase in C+ ion implantation dose.
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700 1 _ |a Yu, W.
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700 1 _ |a Zhao, Q. T.
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700 1 _ |a Buca, D.
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700 1 _ |a Breuer, Uwe
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700 1 _ |a Hartmann, J. -M.
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700 1 _ |a Holländer, B.
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700 1 _ |a Mantl, S.
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700 1 _ |a Zhang, M.
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700 1 _ |a Wang, X.
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773 _ _ |a 10.1016/j.nimb.2012.11.088
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