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@INPROCEEDINGS{Nichau:139635,
      author       = {Nichau, Alexander and Schäfer, Anna and Knoll, Lars and
                      Wirths, Stephan and Schram, T. and Ragnarsson, L. -A. and
                      Schubert, Jürgen and Bernardy, Patric and Luysberg, Martina
                      and Besmehn, Astrid and Breuer, Uwe and Buca, Dan Mihai and
                      Mantl, Siegfried},
      title        = {{R}eduction of silicon dioxide interfacial layer to 4.6 {A}
                      {EOT} by {A}l remote scavenging in high-k/metal gate stacks
                      on {S}i},
      school       = {RWTH Aachen},
      reportid     = {FZJ-2013-05613},
      year         = {2013},
      month         = {Jun},
      date          = {2013-06-25},
      organization  = {18th Conference on 'Insulating Films
                       on Semiconductors', Krakau (Polen), 25
                       Jun 2013 - 28 Jun 2013},
      subtyp        = {Other},
      cin          = {PGI-9 / JARA-FIT / ZEA-3 / PGI-5},
      cid          = {I:(DE-Juel1)PGI-9-20110106 / $I:(DE-82)080009_20140620$ /
                      I:(DE-Juel1)ZEA-3-20090406 / I:(DE-Juel1)PGI-5-20110106},
      pnm          = {421 - Frontiers of charge based Electronics (POF2-421)},
      pid          = {G:(DE-HGF)POF2-421},
      typ          = {PUB:(DE-HGF)6},
      url          = {https://juser.fz-juelich.de/record/139635},
}