Conference Presentation (Other)

FZJ-2013-05613

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Reduction of silicon dioxide interfacial layer to 4.6 A EOT by Al remote scavenging in high-k/metal gate stacks on Si

Nichau, A. (Corresponding author)FZJ* ; Schäfer, A.FZJ* ; Knoll, L.FZJ* ; Wirths, S.FZJ* ; Schram, T. ; Ragnarsson, L. -. ; Schubert, J.FZJ* ; Bernardy, P.FZJ* ; Luysberg, M.FZJ* ; Besmehn, A.ZEA-3*FZJ* ; Breuer, U.ZEA-3*FZJ* ; Buca, D. M.FZJ* ; Mantl, S.FZJ*

2013

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Contributing Institute(s):

1. Halbleiter-Nanoelektronik (PGI-9)
2. Jülich-Aachen Research Alliance - Fundamentals of Future Information Technology (JARA-FIT)
3. Analytik (ZEA-3)
4. Mikrostrukturforschung (PGI-5)

Research Program(s):

1. 421 - Frontiers of charge based Electronics (POF2-421) (POF2-421)

Appears in the scientific report 2013

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