Gast ::
| Hauptseite > Publikationsdatenbank > Reduction of silicon dioxide interfacial layer to 4.6 A EOT by Al remote scavenging in high-k/metal gate stacks on Si |
| Hauptseite > Publikationsdatenbank > Reduction of silicon dioxide interfacial layer to 4.6 A EOT by Al remote scavenging in high-k/metal gate stacks on Si |
| Conference Presentation (Other) | FZJ-2013-05613 |
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2013
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